Complementary metal–oxide–semiconductor (CMOS) involves fabrication technology that uses a combination of n- and p-doped semiconductor material to achieve low power dissipation. Any path through a logic gate through which current can flow includes both n and p type transistors. Only one type is turned on in any stable state so there is no static power dissipation and current only flows when a gate switches in order to charge the parasitic capacitance.[1]
References
- ↑ Complementary Metal Oxide Semiconductor at the Free On-Line Dictionary Of Computing. 1999-06-04.
External links
- CMOS at Wikipedia
